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L8801P manual: 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P Datasheet and L8801P manual
Manufacturer : Polyfet RF
Packing : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Size : 43 KB
Application : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8801P PDF Download