L88016 Similar

  • L88016
    • 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
  • L8801P
    • 10 Watt, silicon gate enhancement mode RF power LDMOS transistor

L88016 Datasheet and L88016 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Size : 38 KB

Application : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor 

L88016 PDF Download