F2013 Similar

  • F2012
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2013
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2013 Datasheet and F2013 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Size : 41 KB

Application : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2013 PDF Download