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F2012 Similar

  • F2012
    • 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2013
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2012 Datasheet and F2012 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 2 

Temperature : Min -65 °C | Max 150 °C

Size : 40 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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