F1214 manual: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 Similar

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1214 Datasheet and F1214 manual

Manufacturer : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Size : 38 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor