F1210 manual: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 Similar

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 Datasheet and F1210 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 40 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor