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F1027 manual: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027 Similar
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- F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027 Datasheet and F1027 manual
Manufacturer : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Size : 43 KB
Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027 PDF Download