F1022 manual: 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1022 Datasheet and F1022 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 41 KB

Application : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor