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IRG4PSC71KD manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4PSC71KD
IRG4PSC71KD manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A
Manufacturer : IR
Packing : SUPER-247
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 215 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A