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IRG4BC10S manual: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4BC10S
IRG4BC10S manual: Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Manufacturer : IR
Packing :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 172 KB
Application : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A