IRG4PH30KD manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A

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IRG4PH30KD Datasheet and IRG4PH30KD manual

Manufacturer : IR

Packing : TO-247AC

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Size : 233 KB

Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A