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IRG4PH30K manual: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4PH30K
IRG4PH30K manual: Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A
Manufacturer : IR
Packing : TO-247AC
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 177 KB
Application : Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A