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IRG4PH20KD manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4PH20KD
IRG4PH20KD manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A
Manufacturer : IR
Packing : TO-247AC
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 303 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A