Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4PC30KD
IRG4PC30KD manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4PC30KD
IRG4PC30KD manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A
Manufacturer : IR
Packing : TO-247AC
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 195 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.21V @ VGE = 15V, IC = 16A