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IRG4BC15UD-L manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRG4BC15UD-L
IRG4BC15UD-L manual: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A
Manufacturer : IR
Packing : TO-262
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 230 KB
Application : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A