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S8550LT1 manual: High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V
Path: OKDatasheet > Semiconductor Datasheet > WingShing Datasheet > S8550LT1
S8550LT1 manual: High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V
Manufacturer : WingShing
Packing : SOT-23
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Size : 93 KB
Application : High voltage epitaxial silicon transistor(PNP). Power dissipation 225mW, Collector current 0.5A. Collector-base voltage 40V