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BUT11 manual: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
Path: OKDatasheet > Semiconductor Datasheet > WingShing Datasheet > BUT11
BUT11 manual: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
Manufacturer : WingShing
Packing : TO-220
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Size : 24 KB
Application : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.