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SR401 manual: 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR401 Similar
- SR401
- 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR401 Datasheet and SR401 manual
Manufacturer : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Size : 40 KB
Application : 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR401 PDF Download