P281 manual: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Similar

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet and P281 manual

Manufacturer : Polyfet RF

Packing : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Size : 41 KB

Application : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor