LQ801 Similar

  • LQ801
    • 30 Watt, silicon gate enhancement mode RF power LDMOS transistor

LQ801 Datasheet and LQ801 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Size : 38 KB

Application : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor 

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