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LB401 manual: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Similar
- LB401
- 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Datasheet and LB401 manual
Manufacturer : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Size : 41 KB
Application : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 PDF Download