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L225 manual: 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Similar
- L225
- 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Datasheet and L225 manual
Manufacturer : Polyfet RF
Packing : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Size : 41 KB
Application : 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 PDF Download