F5001 manual: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Similar

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet and F5001 manual

Manufacturer : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Size : 40 KB

Application : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor