F3002 manual: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 Similar

F3002
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F3002 Datasheet and F3002 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 39 KB

Application : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor