okDatasheet.com

F2247 Similar

  • F2246
    • 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2247
    • 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2248
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2247 Datasheet and F2247 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 6 

Temperature : Min -65 °C | Max 150 °C

Size : 36 KB

Application : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2247 PDF Download