F1510 manual: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Similar

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet and F1510 manual

Manufacturer : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Size : 39 KB

Application : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor