F1430 manual: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1430 Similar

F1430
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1430 Datasheet and F1430 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 41 KB

Application : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor