F1415 Similar

  • F1410
    • 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1415
    • 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1415 Datasheet and F1415 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Size : 42 KB

Application : 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1415 PDF Download