F1280 manual: 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Similar

F1280
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Datasheet and F1280 manual

Manufacturer : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Size : 42 KB

Application : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor