F1240 manual: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1240 Similar

F1240
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1240 Datasheet and F1240 manual

Manufacturer : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Size : 45 KB

Application : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor