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F1209 manual: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209 Similar
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- F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209 Datasheet and F1209 manual
Manufacturer : Polyfet RF
Packing :
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Size : 39 KB
Application : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209 PDF Download