okDatasheet.com

F1170 Similar

  • F1170
    • 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1174
    • 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1170 Datasheet and F1170 manual

Manufacturer : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Size : 47 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1170 PDF Download