F1120 manual: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1120 Similar

F1120
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1120 Datasheet and F1120 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 48 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor