F1116 manual: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Similar

F1116
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Datasheet and F1116 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 46 KB

Application : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor