F1081 manual: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Similar

F1081
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1081 Datasheet and F1081 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 43 KB

Application : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor