F1058 manual: 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1058 Similar

F1058
- 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1058 Datasheet and F1058 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 41 KB

Application : 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor