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F1018 manual: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018 Similar
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- F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
- F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018 Datasheet and F1018 manual
Manufacturer : Polyfet RF
Packing :
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Size : 41 KB
Application : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018 PDF Download