F1006 manual: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1006 Similar

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F1003
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F1004
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F1005
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F1006
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F1007
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F1006 Datasheet and F1006 manual

Manufacturer : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Size : 40 KB

Application : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor