PHX8ND50E Similar

  • PHX8N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8ND50E
    • PowerMOS transistor. FREDFET, avalanche energy rated.

PHX8ND50E Datasheet and PHX8ND50E manual

Manufacturer : Philips 

Packing : SOT186A 

Pins : 3 

Temperature : Min -55 °C | Max 150 °C

Size : 82 KB

Application : PowerMOS transistor. FREDFET, avalanche energy rated. 

PHX8ND50E PDF Download