PHB11N50E Similar

  • PHB100N03LT
    • 25 V, N-channel enhancement mode field-effect transistor
  • PHB10N40
    • PowerMOS transistor.
  • PHB10N40E
    • 400 V, power MOS transistor avalanche energy rated
  • PHB112N06T
    • 55 V, N-channel enhancement mode field-effect transistor
  • PHB11N03LT
    • N-channel TrenchMOS(TM) transistor Logic level FET
  • PHB11N03LT
    • 30 V, N-channel trenchMOS transistor logic level FET
  • PHB11N06LT
    • 55 V, N-channel trenchMOS transistor logic level FET
  • PHB11N06LT
    • TrenchMOS transistor. Logic level FET.

PHB11N50E Datasheet and PHB11N50E manual

Manufacturer : Philips 

Packing : SOT404 

Pins : 3 

Temperature : Min -55 °C | Max 150 °C

Size : 45 KB

Application : PowerMOS transistor. Avalancne energy rated. 

PHB11N50E PDF Download