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NTE3312 manual: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Path: OKDatasheet > Semiconductor Datasheet > NTE Electronic Datasheet > NTE3312
NTE3312 manual: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Manufacturer : NTE Electronic
Packing :
Pins : 3
Temperature : Min 0 °C | Max 150 °C
Size : 19 KB
Application : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.