MTD3055V Similar

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    • N-channel enhancement-mode silicon gate, 10A, 80V
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    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055VL
    • TMOS V power field effect transistor D2PAK for surface mount
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MTD3055V Datasheet and MTD3055V manual

Manufacturer : Motorola 

Packing : DPAK 

Pins : 4 

Temperature : Min -55 °C | Max 175 °C

Size : 226 KB

Application : TMOS V power field effect transistor D2PAK for surface mount 

MTD3055V PDF Download