| Part No | Manufacturer | Application |
|---|
| LCE22 | MDE Semiconductor | 22.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| SA5.0 | MDE Semiconductor | 5.00V; 10mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ8.0 | MDE Semiconductor | 8.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P4KE62 | MDE Semiconductor | 50.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE170A | MDE Semiconductor | 145.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-25D301K | MDE Semiconductor | 300V; max peak current20000A; metal oxide varistor. Standard D series 25mm disc |
| SA30A | MDE Semiconductor | 30.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP15 | MDE Semiconductor | 15.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMCJ18A | MDE Semiconductor | 18.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA17A | MDE Semiconductor | 17.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP110A | MDE Semiconductor | 110V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMBJ170 | MDE Semiconductor | 170.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP54 | MDE Semiconductor | 54.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-7D820M | MDE Semiconductor | 82V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc |
| MAX40-75.0C | MDE Semiconductor | 75.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE13 | MDE Semiconductor | 10.50V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-53D391K | MDE Semiconductor | 390V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| 3KP5.0 | MDE Semiconductor | 5.00V; 50mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 15KP85A | MDE Semiconductor | 85V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ8.0 | MDE Semiconductor | 8.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMCJ54A | MDE Semiconductor | 54.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW26 | MDE Semiconductor | 26.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 15KP180A | MDE Semiconductor | 180V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMLJ15 | MDE Semiconductor | 15.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ60 | MDE Semiconductor | 60.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP20 | MDE Semiconductor | 20.0V; 20mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE350 | MDE Semiconductor | 284.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX40-24.0CA | MDE Semiconductor | 24.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW72 | MDE Semiconductor | 72.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ54A | MDE Semiconductor | 54.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
