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BJ14 30KW84 SA12A 30KW90A MAX40-100.0C SMBJ48A 30KW240A MDE-32D241K 5KP170 MDE-14D112K 3KP8.5 5KP26 SMLJ51A P6KE36 3KP15A MDE-20D102K MAX20-8.5CA SMDJ6.0 30KW30A P4KE440 15KW240 MPTE-18C 5KP7.0A 5KP51 SA170 3KP20 SMLJ12A 3T180A

MDE Semiconductor Datasheets Catalog-33

Part NoManufacturerApplication
3KP13 MDE Semiconductor13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX40-10.0C MDE Semiconductor10.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ14 MDE Semiconductor14.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
30KW84 MDE Semiconductor84.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SA12A MDE Semiconductor12.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
30KW90A MDE Semiconductor90.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX40-100.0C MDE Semiconductor100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMBJ48A MDE Semiconductor48.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
30KW240A MDE Semiconductor240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE-32D241K MDE Semiconductor240V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc
5KP170 MDE Semiconductor170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE-14D112K MDE Semiconductor1100V; max peak current5000A; metal oxide varistor. Standard D series 14mm disc
3KP8.5 MDE Semiconductor8.50V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
5KP26 MDE Semiconductor26.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMLJ51A MDE Semiconductor51.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
P6KE36 MDE Semiconductor29.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
3KP15A MDE Semiconductor15.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MDE-20D102K MDE Semiconductor1000V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc
MAX20-8.5CA MDE Semiconductor8.50V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMDJ6.0 MDE Semiconductor6.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
30KW30A MDE Semiconductor30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P4KE440 MDE Semiconductor356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
15KW240 MDE Semiconductor240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
MPTE-18C MDE Semiconductor18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
5KP7.0A MDE Semiconductor7.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
5KP51 MDE Semiconductor51.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SA170 MDE Semiconductor170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
3KP20 MDE Semiconductor20.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMLJ12A MDE Semiconductor12.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
3T180A MDE Semiconductor160V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor

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