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BJ14 30KW84 SA12A 30KW90A MAX40-100.0C SMBJ48A 30KW240A MDE-32D241K 5KP170 MDE-14D112K 3KP8.5 5KP26 SMLJ51A P6KE36 3KP15A MDE-20D102K MAX20-8.5CA SMDJ6.0 30KW30A P4KE440 15KW240 MPTE-18C 5KP7.0A 5KP51 SA170 3KP20 SMLJ12A 3T180A
MDE Semiconductor Datasheets Catalog-33
Part No | Manufacturer | Application |
---|---|---|
3KP13 | MDE Semiconductor | 13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MAX40-10.0C | MDE Semiconductor | 10.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SMBJ14 | MDE Semiconductor | 14.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
30KW84 | MDE Semiconductor | 84.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SA12A | MDE Semiconductor | 12.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
30KW90A | MDE Semiconductor | 90.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MAX40-100.0C | MDE Semiconductor | 100.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SMBJ48A | MDE Semiconductor | 48.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
30KW240A | MDE Semiconductor | 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-32D241K | MDE Semiconductor | 240V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
5KP170 | MDE Semiconductor | 170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-14D112K | MDE Semiconductor | 1100V; max peak current5000A; metal oxide varistor. Standard D series 14mm disc |
3KP8.5 | MDE Semiconductor | 8.50V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
5KP26 | MDE Semiconductor | 26.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMLJ51A | MDE Semiconductor | 51.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P6KE36 | MDE Semiconductor | 29.10V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
3KP15A | MDE Semiconductor | 15.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-20D102K | MDE Semiconductor | 1000V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc |
MAX20-8.5CA | MDE Semiconductor | 8.50V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SMDJ6.0 | MDE Semiconductor | 6.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
30KW30A | MDE Semiconductor | 30.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P4KE440 | MDE Semiconductor | 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
15KW240 | MDE Semiconductor | 240.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MPTE-18C | MDE Semiconductor | 18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
5KP7.0A | MDE Semiconductor | 7.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
5KP51 | MDE Semiconductor | 51.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SA170 | MDE Semiconductor | 170.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
3KP20 | MDE Semiconductor | 20.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
SMLJ12A | MDE Semiconductor | 12.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
3T180A | MDE Semiconductor | 160V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |