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IRFBE30 manual: HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRFBE30
IRFBE30 manual: HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A
Manufacturer : IR
Packing :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 183 KB
Application : HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 4.1A