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IRFB9N65A manual: HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A
Path: OKDatasheet > Semiconductor Datasheet > IR Datasheet > IRFB9N65A
IRFB9N65A manual: HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A
Manufacturer : IR
Packing :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Size : 112 KB
Application : HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 8.5A