Path: okDatasheet > Semiconductor Datasheet > WingShing Datasheet > WingShing-3
MA4001 WMBT5401LT1 2SB834 WS82C55AP WMBTA92 2SD1878 2SB596 WS628128LLP-70 LS1240A KBPC1510 P600D SR170 2SC3281 KA3842AMN NE555N 2SD1879 MJ11013 MJE13005B 2SD820 2N3773 WMBTA42 KBPC35005 RL206 2SD1063 MJ10023 P600K SMA5819 BDX54C
Part No | Manufacturer | Application |
---|---|---|
2SA1215 | WingShing | PNP planar silicon transistor. Audio power amplifier DC to DC converter. |
KA2410 | WingShing | Telephone tone ringer. External triggering or ringer disables. |
MELFSMA4001 | WingShing | Surface mount silicon rectifier. Max reccurent peak reverse voltage 50V. Max RMS voltage 35V. Max DC blocking voltage 50V |
WMBT5401LT1 | WingShing | PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V |
2SB834 | WingShing | PNP epitaxial silicon transistor. Low frequency power amplifier |
WS82C55AP | WingShing | CMOS programmable peripheral interface. Speed 8MHz |
WMBTA92 | WingShing | NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA. |
2SD1878 | WingShing | Silicon diffused power transistor. |
2SB596 | WingShing | PNP epitaxial silicon transistor. Low frequency power amplifier. |
WS628128LLP-70 | WingShing | Very low power/volpage CMOS SRAM. 128K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns |
LS1240A | WingShing | Electronic two-tone ringer. |
KBPC1510 | WingShing | Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V |
P600D | WingShing | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V |
SR170 | WingShing | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 80V. Max RMS bridge input voltage 56V. Max DC blocking voltage 80V. |
2SC3281 | WingShing | NPN planar silicon transistor. Audio power amplifier DC to DC converter |
KA3842AMN | WingShing | Linear integrated circuit |
NE555N | WingShing | Precision timer |
2SD1879 | WingShing | Silicon diffused power transistor. |
MJ11013 | WingShing | PNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers |
MJE13005B | WingShing | NPN silicon transistor. Electronic transformers, power switching circuit Vcbo=700V, Vceo=400V, Vebo=9V |
2SD820 | WingShing | Silicon diffused power transistor. |
2N3773 | WingShing | NPN planar silicon transistor. Audio power amplifier DC to DC converter |
WMBTA42 | WingShing | NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA. |
KBPC35005 | WingShing | Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V |
RL206 | WingShing | Silicon rectifier. Max reccurent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 2.0A |
2SD1063 | WingShing | NPN planar silicon transistor. PSW/D/DDC. Complementary to 2SB827 |
MJ10023 | WingShing | Silicon NPN power darlington transistor. |
P600K | WingShing | Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V |
SMA5819 | WingShing | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 40V. Max RMS bridge input voltage 28V. Max DC blocking voltage 40V. |
BDX54C | WingShing | PNP epitaxial silicon transistor. Collector-base voltage -100V. Collector-emitter voltage -100V. Emitter-base voltage -5V |