| Part No | Manufacturer | Application |
|---|
| P4KE20A | MDE Semiconductor | 17.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMCJ10A | MDE Semiconductor | 10.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-34S201K | MDE Semiconductor | 200V; max peak current40000A; Tmax=11; metal oxide varistor. High energy series 34mm single square |
| 20KW256A | MDE Semiconductor | 256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE43A | MDE Semiconductor | 36.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 20KW34 | MDE Semiconductor | 34.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMCJ130A | MDE Semiconductor | 130.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMBJ6.5 | MDE Semiconductor | 6.50V; 10mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMAJ17 | MDE Semiconductor | 17.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-24.0C | MDE Semiconductor | 24.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-20D561K | MDE Semiconductor | 560V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
| ICTE-10C | MDE Semiconductor | 10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-85.0C | MDE Semiconductor | 85.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-48.0CA | MDE Semiconductor | 48.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE20 | MDE Semiconductor | 15.30V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| P6KE110 | MDE Semiconductor | 89.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW56A | MDE Semiconductor | 56.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P6KE300 | MDE Semiconductor | 243.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP22A | MDE Semiconductor | 22.0V; 10mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ22A | MDE Semiconductor | 22.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-34S331K | MDE Semiconductor | 330V; max peak current40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square |
| MAX40-33.0CA | MDE Semiconductor | 33.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE43A | MDE Semiconductor | 36.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX40-7.0C | MDE Semiconductor | 7.00V; 50mA ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ51 | MDE Semiconductor | 51.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX20-120.0C | MDE Semiconductor | 120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KW40 | MDE Semiconductor | 40.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-20D390K | MDE Semiconductor | 39V; max peak current3000A; metal oxide varistor. Standard D series 20mm disc |
| SMAJ85A | MDE Semiconductor | 85.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE47 | MDE Semiconductor | 38.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
