P121 manual: 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Similar

P121
- 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Datasheet and P121 manual

Manufacturer : Polyfet RF

Packing : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Size : 35 KB

Application : 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor