| Part No | Manufacturer | Application |
|---|
| P4KE82 | MDE Semiconductor | 66.40V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-25S331K | MDE Semiconductor | 330V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| 5KP18A | MDE Semiconductor | 18.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA51A | MDE Semiconductor | 51.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX20-11.0CA | MDE Semiconductor | 11.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 30KW39 | MDE Semiconductor | 39.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MAX20-6.0CA | MDE Semiconductor | 6.00V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE75A | MDE Semiconductor | 64.10V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 5KP10 | MDE Semiconductor | 10.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE43A | MDE Semiconductor | 36.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| MDE-25S301K | MDE Semiconductor | 300V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| 15KW160 | MDE Semiconductor | 160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMBJ12 | MDE Semiconductor | 12.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-14D121K | MDE Semiconductor | 120V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
| 15KP30 | MDE Semiconductor | 30.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1N6379 | MDE Semiconductor | 22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMCJ33 | MDE Semiconductor | 33.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA13A | MDE Semiconductor | 13.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ48 | MDE Semiconductor | 48.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-14D621K | MDE Semiconductor | 6260V; max peak current5000A; metal oxide varistor. Standard D series 14mm disc |
| SMDJ60A | MDE Semiconductor | 60.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-32D391K | MDE Semiconductor | 390V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| P4KE68A | MDE Semiconductor | 58.10V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| P6KE100 | MDE Semiconductor | 81.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP6.5A | MDE Semiconductor | 6.50V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMLJ150A | MDE Semiconductor | 150.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMDJ6.0A | MDE Semiconductor | 6.00V; 10mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE130A | MDE Semiconductor | 111.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMCJ30A | MDE Semiconductor | 30.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW144A | MDE Semiconductor | 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
